Prof Jian Zhang

Journal article

Jian J, Yuan X, Chai Z, Zhou X, Luo Y, He Y, Yue X, Zhang JF, Zhang W, Min T. 2024. Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions IEEE Electron Device Letters, DOI Publisher Url Public Url

Hong Y, Zheng X, Zhang H, He Y, Zhu T, Zhang W, Zhang JF, Ma X, Hao Y. 2024. Fröhlich Scattering Effects on Electron Mobility in β-Ga2O3 Power Devices under High Temperature Physica Status Solidi (B) Basic Research, DOI Publisher Url Public Url

Yue S, Zheng X, Zhang F, Lin D, Bu S, Wang Y, Hu P, Liu J, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the electrical performance degradation mechanism of β-Ga2O3 p-n diode under heavy ion radiation Applied Physics Letters, 125 DOI Publisher Url

Yue S, Zheng X, Zhang F, Hong Y, Wang Y, Zhu T, Gong S, Wang X, Lv L, Cao Y, Zhang W, Zhang J, Ma X, Hao Y. 2024. Investigation on Electrical Performance Degradation Mechanism of β-GaO Schottky Barrier Diodes Under 3 MeV Proton Radiation IEEE Transactions on Electron Devices, 71 :4584-4589 DOI Publisher Url

Zhang H, Zheng X, Lin D, Hong Y, Zhou J, Lv L, Cao Y, Han H, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under on-state with High Drain Bias IEEE Transactions on Electron Devices, :1-5 DOI Publisher Url Public Url

Hong Y, Zheng X, Zhang H, He Y, Zhu T, Liu K, Li A, Ma X, Zhang W, Zhang J, Hao Y. 2024. Oxygen Stoichiometry Engineering in P-Type NiOx for High-Performance NiO/Ga2O3 Heterostructure p–n Diode Physica Status Solidi - Rapid Research Letters, DOI Publisher Url

Yuan X, Jian J, Chai Z, Wei H, Zhou X, Wen Y, Liu Y, Yan W, He Y, Zhang JF, Zhang W, Min T. 2024. Arbitrary Modulation of Average Dwell Time in Discrete-Time Markov Chains based on Tunneling Magnetoresistance Effect IEEE Electron Device Letters, DOI Publisher Url Public Url

Zhang H, Zheng X, Lin D, Lv L, Cao Y, Hong Y, Zhang F, Wang X, Wang Y, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the single-event burnout mechanism of GaN MMIC power amplifiers Applied Physics Letters, 124 DOI Publisher Url Public Url

Ji Z, Xue Y, Ren P, Ye J, Li Y, Wu Y, Wang D, Wang S, Wu J, Wang Z, Wen Y, Xia S, Zhang L, Zhang J, Liu J, Luo J, Deng H, Wang R, Yang L, Huang R. 2023. Towards Reliability- & Variability-aware Design-Technology Co-optimization in Advanced Nodes: Defect Characterization, Industry-friendly Modelling and ML-assisted Prediction IEEE Transactions on Electron Devices, 71 :138-150 DOI Publisher Url Public Url

Brown J, Tok KH, Gao R, Ji Z, Zhang W, Marsland JS, Chiarella T, Franco J, Kaczer B, Linten D, Zhang JF. 2023. A Pragmatic Model to Predict Future Device Aging IEEE Access, 11 :127725-127736 DOI Publisher Url Public Url

Yuan X, Jian J, Chai Z, An S, Gao Y, Zhou X, Zhang JF, Zhang W, Min T. 2023. Markov Chain Signal Generation based on Single Magnetic Tunnel Junction IEEE Electron Device Letters, :1-1 DOI Publisher Url Public Url

Xue Y, Ren P, Wu J, Liu Z, Wang S, Li Y, Wang Z, Sun Z, Wang D, Wen Y, Xia S, Zhang L, Zhang J, Ji Z, Luo J, Deng H, Wang R, Yang L, Huang R. 2023. On the understanding of PMOS NBTI degradation in advance nodes: Characterization, modeling and exploration on the physical origin of defects IEEE Transactions on Electron Devices, 70 :4518-4524 DOI Publisher Url Public Url

Liu X, Ren P, Chen H, Ji Z, Liu J, Wang R, Zhang JF, Huang R. 2023. Equiprobability-based Local Response Surface Method for High-Sigma Yield Estimation with Both High Accuracy and Efficiency IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, :1346-1350 DOI Publisher Url Public Url

Tok KH, Zhang J, Brown J, Ji Z, Zhang W, Marsland J. 2023. Characterizing and Modelling RTN under real circuit bias conditions IEEE Transactions on Electron Devices, 70 :2424-2430 DOI Publisher Url Public Url

Hu Z, Zhang W, Degraeve R, Garbin D, Chai Z, Saxena N, Freitas P, Fantini A, Ravsher T, Clima S, Zhang J, Delhougne R, Goux L, Kar G. 2022. New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors IEEE Transactions on Electron Devices, DOI Publisher Url Public Url

Tok KH, Zhang JF, Brown J, Ye Z, Ji Z, Zhang WD, Marsland JS. 2022. AC RTN: Testing, Modeling, and Prediction IEEE Transactions on Electron Devices, :1-7 DOI Publisher Url Public Url

Du Y, Shao W, Chai Z, Zhao H, Diao Q, Gao Y, Yuan X, Wang Q, Li T, Zhang WD, Zhang JF, Min T. 2022. Synaptic 1/f noise injection for overfitting suppression in hardware neural networks Neuromorphic Computing and Engineering, DOI Publisher Url Public Url

Zhou X, Hu Z, Chai Z, Zhang WD, Clima S, Degraeve R, Zhang JF, Fantini A, Garbin D, Delhougne R, Goux L, Kar GS. 2022. Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching IEEE Electron Device Letters, 43 :1061-1064 DOI Publisher Url Public Url

Tok KH, Mehedi M, Zhang JF, Brown J, Ye Z, Ji Z, Zhang W, Marsland JS, Asenov A, Georgiev V. 2022. An Integral Methodology for Predicting Long Term RTN IEEE Transactions on Electron Devices, DOI Publisher Url Public Url

Zhang JF, Gao R, Duan M, Ji Z, Zhang WD, Marsland J. 2022. Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction Electronics, 11 DOI Publisher Url Public Url

Liu C, Ren P, Zhou B, Zhang JF, Fang H, Ji Z. 2021. Investigation on the implementation of stateful minority logic for future in-memory computing IEEE Access, 9 :168648-168655 DOI Author Url Publisher Url Public Url

Tu Z, Xue Y, Ren P, Hao F, Wang R, Li M, Zhang J, Ji Z, Huang R. 2021. A Probability-based Strong Physical Unclonable Function with Strong Machine Learning Immunity IEEE Electron Device Letters, :1-1 DOI Author Url Publisher Url Public Url

Chai Z, Zhang WD, Clima S, Hatem F, Degraeve R, Diao Q, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2021. Cycling induced metastable degradation in GeSe Ovonic threshold switching selector IEEE Electron Device Letters, 42 :1148-1451 DOI Author Url Publisher Url Public Url

Gao R, Ma J, Lin X, Zhang X, En Y, Lu G, Huang Y, Ji Z, Yang H, Zhang WD, Zhang JF. 2021. A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack IEEE Journal of the Electron Devices Society, 9 :539-544 DOI Author Url Publisher Url Public Url

Mehedi M, Tok KH, Ye Z, Zhang JF, Ji Z, Zhang WD, Marsland J. 2021. On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude IEEE Access, DOI Author Url Publisher Url Public Url

Brown J, Zhang JF, Zhou B, Mehedi M, Freitas P, Marsland J, Ji Z. 2020. Random‑telegraph‑noise‑enabled true random number generator for hardware security Scientific Reports, 10 DOI Author Url Publisher Url Public Url

Mehedi M, Tok KH, Zhang JF, Ji Z, Ye Z, Zhang WD, Marsland JS. 2020. An assessment of the statistical distribution of Random Telegraph Noise Time Constants IEEE Access, 8 :182273-182282 DOI Author Url Publisher Url Public Url

Chai Z, Freitas P, Zhang WD, Hatem F, Degraeve R, Clima S, Zhang J, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2020. Stochastic computing based on volatile GeSe ovonic threshold switching selectors IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Gao R, Shi Y, He Z, Chen Y, En Y, Huang Y, Ji Z, Zhang JF, Zhang WD, Zheng X, Zhang J, Liu Y. 2020. A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT IEEE Journal of the Electron Devices Society, 8 :905-910 DOI Author Url Publisher Url Public Url

Du Y, Jing L, Fang H, Chen H, Cai Y, Wang R, Zhang JF, Ji Z. 2020. Exploring the impact of random telegraph noise-induced accuracy loss in Resistive RAM-based deep neural network IEEE Transactions on Electron Devices, 67 :3335-3340 DOI Author Url Publisher Url Public Url

Zhao T, Zhao C, Zhang JF, Mitrovic IZ, Lim EG, Yang L, Song T, Zhao C. 2020. Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation Journal of Alloys and Compounds, 829 DOI Publisher Url Public Url

Chai Z, Wei S, Zhang WD, Brown J, Degraeve R, Salim F, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Chai Z, Zhang WD, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar GS. 2019. Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Chai Z, Zhang WD, Degraeve R, Zhang JF, Marsland J, Fantini A, Garbin D, Clima S, Goux L, Kar GS. 2019. RTN in GexSe1-x OTS Selector Devices Microelectronic Engineering, 215 DOI Author Url Publisher Url Public Url

Zhan X, Shen C, Ji Z, Chen J, Fang H, Guo F, Zhang JF. 2019. A Dual-Point technique for the entire ID-VG characterization into subthreshold region under Random Telegraph Noise condition IEEE Electron Device Letters, 40 :674-677 DOI Author Url Publisher Url Public Url

Manut A, Gao R, Zhang JF, Ji Z, Mehedi M, Vigar D, Asenov A, Kaczer B. 2019. Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd IEEE Transactions on Electron Devices, 66 :1482-1488 DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang WD, Zhang JF, Marsland J, Govoreanu B, Degraeve R, Goux L, Kar G. 2018. TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device IEEE Transactions on Electron Devices, 66 :777-784 DOI Author Url Publisher Url Public Url

Chai Z, Freitas P, Zhang WD, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Ji Z, Gao R, Zhang JF, Marsland J, Zhang WD. 2018. As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI) IEEE Transactions on Electron Devices, 65 :3662-3668 DOI Author Url Publisher Url Public Url

Chai Z, Zhang WD, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, 39 :955-958 DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang WD, Zhang JF, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 DOI Author Url Publisher Url Public Url

Zhang JF, Ji Z, Zhang WEI. 2017. As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction Microelectronics Reliability, DOI Author Url Publisher Url Public Url

Kang J, Yu Z, Wu L, Fang Y, Wang Z, Cai Y, Ji Z, Zhang JF, Wang R, Yang Y, Huang R. 2017. Time-Dependent Variability in RRAM-based Analog Neuromorphic System for Pattern Recognition Technical Digest of the IEEE International Electron Devices Meeting (IEDM),, Author Url Public Url

Ji Z, Gao R, Manut AB, Zhang JF, Franco J, Hatta SWM, Zhang W, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE Transactions on Electron Devices, 64 :4011-4017 DOI Author Url Publisher Url Public Url

Sedghi N, Li H, Brunell IF, Dawson K, Guo Y, Potter RJ, Gibbon JT, Dhanak VR, Zhang WD, Zhang JF, Hall S, Robertson J, Chalker PR. 2017. Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping Applied Physics Letters, 111 DOI Author Url Publisher Url Public Url

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, 64 :4099-4105 DOI Author Url Publisher Url Public Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Asenov A. 2017. Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs IEEE Transactions on Electron Devices, 64 :2478-2484 DOI Author Url Publisher Url Public Url

Sedghi N, Li H, Brunell IF, Dawson K, Potter RJ, Guo Y, Gibbon JT, Dhanak VR, Zhang W, Zhang JF, Robertson J, Hall S, Chalker PR. 2017. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM Applied Physics Letters, 110 DOI Author Url Publisher Url Public Url

Gao R, Manut AB, Ji Z, Ma J, Duan M, Zhang JF, Franco J, Hatta SFWM, Zhang WD, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation IEEE Transactions on Industrial Electronics, 64 :1467-1473 DOI Author Url Publisher Url Public Url

Zhao X, Zhang JF, Liu S, Zhao C, Wang C, Ren X, Yang Q. 2016. Investigation on grain refinement mechanism of Ni-based coating with LaAlO3 by first-principles Materials and Design, 110 :644-652 DOI Author Url Publisher Url Public Url

Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 :3830-3836 DOI Author Url Publisher Url Public Url

Duan M, Zhang JF, Ji Z, Zhang WD, Vigar D, Asenov A, Gerrer L, Chandra V, Aitken R, Kaczer B. 2016. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging IEEE Transactions on Electron Devices, 63 :3642-3648 DOI Author Url Publisher Url Public Url

Manut AB, Zhang JF, Duan M, Ji Z, Zhang WD, kaczer B, Schram T, Horiguchi, N, Groeseneken G. 2015. Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation IEEE Journal of the Electron Devices Society, DOI Author Url Publisher Url Public Url

Ji Z, Zhang JF, Zhang WD, Gao R, Zhang X. 2015. An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel IEEE Transactions on Electron Devices, 62 :3633-3639 DOI Author Url Publisher Url Public Url

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 DOI Author Url Publisher Url Public Url

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations MICROELECTRONICS RELIABILITY, 54 :2258-2261 DOI Author Url Publisher Url

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric MICROELECTRONICS RELIABILITY, 54 :2329-2333 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2014. Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :3081-3089 DOI Author Url Publisher Url Public Url

Tang B, Zhang W, Toledano-Luque M, Zhang JF, Degraeve R, Ji Z, Arreghini A, Van den Bosch G, Van Houdt J. 2014. Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel IEEE Transactions on Electron Devices, 61 :1501-1507 DOI Author Url Publisher Url

Tang B, Zhang WD, Degraeve R, Breuil L, Blomme P, Zhang JF, Ji Z, Zahid M, Toledano-Luque M, Van den Bosch G, Van Houdt J. 2014. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells IEEE Transactions on Electron Devices, 61 :1299-1306 DOI Author Url Publisher Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE Transactions on Electron Devices, 61 :1307-1315 DOI Author Url Publisher Url Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 DOI Author Url Publisher Url Public Url

Ji Z, Hatta SWM, Zhang JF, Zhang W, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2014. A new technique for probing the energy distribution of positive charges in gate dielectric 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :73-78 DOI Author Url Publisher Url

Zhang JF, Duani M, Ji Z, Zhang W. 2014. TIME-DEPENDENT DEVICE-TO-DEVICE VARIATION ACCOUNTING FOR WITHIN-DEVICE FLUCTUATION (TVF): A NEW CHARACTERIZATION TECHNIQUE Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), DOI Author Url Publisher Url

Robinson C, Zhang WD, Tang B, Zheng XF, Zhang JF. 2014. Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and Suppression Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), DOI Author Url Publisher Url

Ji Z, Gillbert J, Zhang JF, Zhang W. 2013. A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs IEEE International Conference on Microelectronic Test Structures, :64-69 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation IEEE Transactions on Electron Devices, 60 :2505-2511 DOI Author Url Publisher Url

Liu WJ, Sun XW, Tran XA, Fang Z, Wang ZR, Wang F, Wu L, Zhang JF, Wei J, Zhu HL, Yu HY. 2013. Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :2682-2686 DOI Author Url Publisher Url

Tang B, Robinson C, Zhang WD, Zhang JF, Degraeve R, Blomme P, Toledano-Luque M, Van Den Bosch G, Govoreanu B, Van Houdt J. 2013. Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks IEEE Transactions on Electron Devices, 60 :2261-2267 DOI Author Url Publisher Url

Tang B, Toledano-Luque M, Zhang WD, Van Den Bosch G, Degraeve R, Zhang JF, Van Houdt J. 2013. Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization Microelectronic Engineering, 109 :39-42 DOI Author Url Publisher Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al 2O3 structure Microelectronic Engineering, 109 :43-45 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2013. New insights into defect loss, slowdown, and device lifetime enhancement IEEE Transactions on Electron Devices, 60 :413-419 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang W. 2013. Defect losses under different processes, stress, recovery, and anneal conditions Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 52 :929-934 DOI Author Url Publisher Url

Hatta SWM, Ji Z, Zhang JF, Duan M, Zhang WD, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :1745-1753 DOI Author Url Publisher Url

Ji Z, Hatta SFWM, Zhang JF, Ma JG, Zhang W, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Ma JG, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url

Zhang JF, Ji Z, Duan M, Zhang W. 2012. Development of new characterisation technique for interface states beyond bandgap ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, DOI Author Url Publisher Url

Zhang WD, Robinson C, Zheng XF, Zhang JF. 2012. Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, DOI Author Url Publisher Url

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO 2/SiO2 gate stack IEEE Electron Device Letters, 33 :1681-1683 DOI Author Url Publisher Url

Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2012. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :783-790 DOI Author Url Publisher Url

Liu WJ, Sun XW, Fang Z, Wang ZR, Tran XA, Wang F, Wu L, Ng GI, Zhang JF, Wei J, Zhu HL, Yu HY. 2012. Positive Bias-Induced V_th Instability in Graphene Field Effect Transistors IEEE ELECTRON DEVICE LETTERS, 33 :339-341 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, De Gendt S, Groeseneken G. 2012. Defect Loss: A New Concept for Reliability of MOSFETs IEEE ELECTRON DEVICE LETTERS, 33 :480-482 DOI Author Url Publisher Url

Liu WJ, Sun XW, Tran XA, Fang Z, Wang ZR, Wang F, Wu L, Zhang JF, Wei J, Zhu HL, Yu HY. 2012. Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 12 :478-481 DOI Author Url Publisher Url

Ji Z, Zhang JF, Zhang W. 2012. A New Mobility Extraction Technique Based on Simultaneous Ultrafast I_d-V_g and C_cg-V_g Measurements in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1906-1914 DOI Author Url Publisher Url

Tang B, Zhang WD, Zhang JF, Van den Bosch G, Toledano-Luque M, Govoreanu B, Van Houdt J. 2012. Investigation of Abnormal V_TH/V_FB Shifts Under Operating Conditions in Flash Memory Cells With Al₂O₃ High-κ Gate Stacks IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1870-1877 DOI Author Url Publisher Url

Zheng XF, Robinson C, Zhang WD, Zhang JF, Govoreanu B, Van Houdt J. 2011. Electron Trapping in HfAlO High-kappa Stack for Flash Memory Applications: An Origin of V-th Window Closure During Cycling Operations IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1344-1351 DOI Author Url Publisher Url

Lin L, Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2011. A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1490-1498 DOI Author Url Publisher Url

Zhang JF, Ji Z, Lin L, Zhang W. 2010. Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, :1600-1603 DOI Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2010. A New Multipulse Technique for Probing Electron Trap Energy Distribution in High-kappa Materials for Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2484-2492 DOI Author Url Publisher Url

Ji Z, Lin L, Zhang JF, Kaczer B, Groeseneken G. 2010. NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :228-237 DOI Author Url Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Aguado DR, Zhang JF, Van Houdt J. 2010. Energy and Spatial Distributions of Electron Traps Throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :288-296 DOI Author Url Publisher Url

Ji Z, Zhang JF, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. An assessment of the mobility degradation induced by remote charge scattering APPLIED PHYSICS LETTERS, 95 DOI Author Url Publisher Url

Ji Z, Zhang JF, Chang MH, Kaczer B, Groeseneken G. 2009. An Analysis of the NBTI-Induced Threshold Voltage Shift Evaluated by Different Techniques IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 :1086-1093 DOI Author Url Publisher Url

Ji Z, Lin L, Zhang J. 2009. Impact of Sensing Gate Bias on NBTI of Hf-based Dielectric Stacks ECS Meeting Abstracts, MA2009-01 :797-797 DOI Publisher Url

Chang MH, Zhao CZ, Ji Z, Zhang JF, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks JOURNAL OF APPLIED PHYSICS, 105 DOI Author Url Publisher Url

Zhang JF, Chang MH, Ji Z, Lin L, Ferain I, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2008. Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks IEEE ELECTRON DEVICE LETTERS, 29 :1360-1363 DOI Author Url Publisher Url

Efthymiou E, Bernardini S, Zhang JF, Volkos SN, Hamilton B, Peaker AR. 2008. Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment THIN SOLID FILMS, 517 :207-208 DOI Author Url Publisher Url

Zhang WD, Govoreanu B, Zheng XF, Aguado DR, Rosmeulen M, Blomme P, Zhang JF, Van Houdt J. 2008. Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks IEEE ELECTRON DEVICE LETTERS, 29 :1043-1046 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Chang MH, Peaker AR, Hall S, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2008. Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect IEEE TRANSACTIONS ON ELECTRON DEVICES, 55 :1647-1656 DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Chang MH, Zahid MB, Peaker AR, Hall S, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2008. Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks APPLIED PHYSICS LETTERS, 92 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Chang MH, Peaker AR, Hall S, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2008. Process-induced positive charges in Hf-based gate stacks JOURNAL OF APPLIED PHYSICS, 103 DOI Author Url Publisher Url

Zhang JF, Zhao C, Chang M, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and Defects in Gate Dielectric: Similarity and Differences Between Hf-Stacks and SiO2 ECS Meeting Abstracts, MA2007-02 :1133-1133 DOI Publisher Url

Zhao CZ, Zahid MB, Zhang JF, Groeseneken G, Degraeve R, De Gendt S. 2007. Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics APPLIED PHYSICS LETTERS, 90 DOI Author Url Publisher Url

Zhang JF, Chang MH, Groeseneken G. 2007. Effects of measurement temperature on NBTI IEEE ELECTRON DEVICE LETTERS, 28 :298-300 DOI Author Url Publisher Url

Chang MH, Zhang JF. 2007. On positive charge formed under negative bias temperature stress JOURNAL OF APPLIED PHYSICS, 101 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Zahid MB, Govoreanu B, Groeseneken G, De Gendt S. 2006. Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks JOURNAL OF APPLIED PHYSICS, 100 DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Zahid MB, Groeseneken G, Degraeve R, De Gendt S. 2006. An assessment of the location of As-grown electron traps in HfO2/HfSiO stacks IEEE ELECTRON DEVICE LETTERS, 27 :817-820 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Zahid MB, Groeseneken G, Degraeve R, De Gendt S. 2006. Impact of gate materials on positive charge formation in HfO2/SiO2 stacks APPLIED PHYSICS LETTERS, 89 DOI Author Url Publisher Url

Chang MH, Zhang JF, Zhang WD. 2006. Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :1347-1354 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Zhao CZ, Chang MH, Groeseneken G, Degraeve R. 2006. Electrical signature of the defect associated with gate oxide breakdown IEEE ELECTRON DEVICE LETTERS, 27 :393-395 DOI Author Url Publisher Url

Wang YG, Xu MZ, Tan CH, Zhang JF, Duan XR. 2005. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses CHINESE PHYSICS, 14 :1886-1891 DOI Author Url Publisher Url

Zhao CZ, Zhang JF. 2005. Effects of hydrogen on positive charges in gate oxides JOURNAL OF APPLIED PHYSICS, 97 DOI Author Url Publisher Url

Chang MH, Zhang JF. 2004. On the role of hydrogen in hole-induced electron trap creation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 :1333-1338 DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Chen AH, Groeseneken GD, Degraeve R. 2004. Hole traps in silicon dioxides - Part I: Properties IEEE TRANSACTIONS ON ELECTRON DEVICES, 51 :1267-1273 DOI Author Url Publisher Url

Zhao CZ, Zhang HF, Groeseneken G, Degraeve R. 2004. Hole-traps in silicon dioxides - Part II: Generation mechanism IEEE TRANSACTIONS ON ELECTRON DEVICES, 51 :1274-1280 DOI Author Url Publisher Url

Zhang JF, Sii HK, Chen AH, Zhao CZ, Uren MJ, Groeseneken G, Degraeve R. 2004. Hole trap generation in gate dielectric during substrate hole injection SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 :L1-L3 DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Groeseneken G, Degraeve R. 2003. Analysis of the kinetics for interface state generation following hole injection JOURNAL OF APPLIED PHYSICS, 93 :6107-6116 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Lalor MJ, Burton DR, Groeseneken G, Degraeve R. 2003. Effects of detrapping on electron traps generated in gate oxides SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18 :174-182 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken GV, Degraeve R. 2002. Two types of neutral electron traps generated in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 49 :1868-1875 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. On the interface states generated under different stress conditions APPLIED PHYSICS LETTERS, 79 :3092-3094 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken G, Degraeve R. 2001. On the mechanism of electron trap generation in gate oxides MICROELECTRONIC ENGINEERING, 59 :89-94 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. Dependence of energy distributions of interface states on stress conditions MICROELECTRONIC ENGINEERING, 59 :95-99 DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Hydrogen induced positive charge generation in gate oxides JOURNAL OF APPLIED PHYSICS, 90 :1911-1919 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Interface state generation after hole injection JOURNAL OF APPLIED PHYSICS, 90 :328-336 DOI Author Url Publisher Url

Zhang JF, Sii HK, Groeseneken G, Degraeve R. 2001. Hole trapping and trap generation in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 48 :1127-1135 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Generation of mobile hydrogenous ions in gate oxide and their potential applications ELECTRONICS LETTERS, 37 :716-717 DOI Author Url Publisher Url

Zhang JF, Sii HK, Degraeve R, Groeseneken G. 2000. Mechanism for the generation of interface state precursors JOURNAL OF APPLIED PHYSICS, 87 :2967-2977 DOI Author Url Publisher Url

Zhang JF, Sii HK, Groeseneken G, Degraeve R. 2000. Degradation of oxides and oxynitrides under hot hole stress IEEE TRANSACTIONS ON ELECTRON DEVICES, 47 :378-386 DOI Author Url Publisher Url

Tan RHG, Zhang JF, Morgan R, Greenwood A. 1999. Still image compression based on 2D discrete wavelet transform ELECTRONICS LETTERS, 35 :1934-1935 DOI Author Url Publisher Url

Zhang JF, Al-kofahi IS, Groeseneken G. 1998. Behavior of hot hole stressed SiO2/Si interface at elevated temperature JOURNAL OF APPLIED PHYSICS, 83 :843-850 DOI Author Url Publisher Url

Zhang JF, Eccleston W. 1998. Positive bias temperature instability in MOSFET's IEEE TRANSACTIONS ON ELECTRON DEVICES, 45 :116-124 DOI Author Url Publisher Url

Alkofahi IS, Zhang JF, Groeseneken G. 1997. Continuing degradation of the SiO2/Si interface after hot hole stress JOURNAL OF APPLIED PHYSICS, 81 :2686-2692 DOI Author Url Publisher Url

ZHANG JF, ECCLESTON W. 1995. EFFECTS OF HIGH-FIELD INJECTION ON THE HOT-CARRIER-INDUCED DEGRADATION OF SUBMICROMETER PMOSFETS IEEE TRANSACTIONS ON ELECTRON DEVICES, 42 :1269-1276 DOI Author Url Publisher Url

GOH IS, ZHANG JF, HALL S, ECCLESTON W, WERNER K. 1995. ELECTRICAL-PROPERTIES OF PLASMA-GROWN OXIDE ON MBE-GROWN SIGE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 10 :818-828 DOI Author Url Publisher Url

GOH IS, HALL S, ECCLESTON W, ZHANG JF, WERNER K. 1994. INTERFACE QUALITY OF SIGE OXIDE PREPARED BY RF PLASMA ANODIZATION ELECTRONICS LETTERS, 30 :1988-1989 DOI Author Url Publisher Url

ZHANG JF, ECCLESTON B. 1994. DONOR-LIKE INTERFACE-TRAP GENERATION IN PMOSFETS AT ROOM-TEMPERATURE IEEE TRANSACTIONS ON ELECTRON DEVICES, 41 :740-744 DOI Author Url Publisher Url

TAYLOR S, ZHANG JF, ECCLESTON W. 1993. A REVIEW OF THE PLASMA OXIDATION OF SILICON AND ITS APPLICATIONS SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 :1426-1433 DOI Author Url Publisher Url

ZHANG JF, TAYLOR S, ECCLESTON W, BARLOW K. 1993. RECOVERY OF SUBMICROMETER PMOSFETS FROM HOT-CARRIER DEGRADATION BY HIGH-FIELD INJECTION ELECTRONICS LETTERS, 29 :1097-1099 DOI Author Url Publisher Url

ZHANG JF, TAYLOR S, ECCLESTON W. 1992. A COMPARATIVE-STUDY OF THE ELECTRON TRAPPING AND THERMAL DETRAPPING IN SIO2 PREPARED BY PLASMA AND THERMAL-OXIDATION JOURNAL OF APPLIED PHYSICS, 72 :1429-1435 DOI Author Url Publisher Url

ZHANG JF, TAYLOR S, ECCLESTON W. 1992. A QUANTITATIVE INVESTIGATION OF ELECTRON DETRAPPING IN SIO2 UNDER FOWLER-NORDHEIM STRESS JOURNAL OF APPLIED PHYSICS, 71 :5989-5996 DOI Author Url Publisher Url

ZHANG JF, TAYLOR S, ECCLESTON W. 1992. ELECTRON TRAP GENERATION IN THERMALLY GROWN SIO2 UNDER FOWLER-NORDHEIM STRESS JOURNAL OF APPLIED PHYSICS, 71 :725-734 DOI Author Url Publisher Url

MATTEY NL, DOWSETT MG, PARKER EHC, WHALL TE, TAYLOR S, ZHANG JF. 1990. PARA-TYPE DELTA-DOPED LAYERS IN SILICON - STRUCTURAL AND ELECTRONIC-PROPERTIES APPLIED PHYSICS LETTERS, 57 :1648-1650 DOI Author Url Publisher Url

ZHANG JF, TAYLOR S, ECCLESTON W, NIELD M. 1990. GROWTH AND PROPERTIES OF THIN SIO2-FILMS BY INDUCTIVELY COUPLED LOW-TEMPERATURE PLASMA ANODIZATION SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 5 :824-830 DOI Author Url Publisher Url

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ZHANG JF, WATKINSON P, TAYLOR S, ECCLESTON W. 1989. INTERFACE STATE BEHAVIOR OF PLASMA GROWN OXIDES FOLLOWING LOW-TEMPERATURE ANNEALING APPLIED SURFACE SCIENCE, 39 :374-380 DOI Author Url Publisher Url

ZHANG JF, FANG MTC. 1989. DYNAMIC BEHAVIOR OF HIGH-PRESSURE ARCS NEAR THE FLOW STAGNATION POINT IEEE TRANSACTIONS ON PLASMA SCIENCE, 17 :524-533 DOI Author Url Publisher Url

GOSWAMI R, BUTCHER JB, GINIGE R, ZHANG JF, TAYLOR S, ECCLESTON W. 1988. LOW-TEMPERATURE GATE DIELECTRICS FORMED BY PLASMA ANODIZATION OF SILICON-NITRIDE ELECTRONICS LETTERS, 24 :1269-1270 DOI Author Url Publisher Url

ZHANG JF, FANG MTC. 1988. A COMPARATIVE-STUDY OF SF6 AND N-2 ARCS IN ACCELERATING FLOW JOURNAL OF PHYSICS D-APPLIED PHYSICS, 21 :730-736 DOI Author Url Publisher Url

ZHANG JF, NEWLAND DB, FANG MTC. 1987. THE COMPUTATION OF SELF-SIMILAR ARCS COMPUTER PHYSICS COMMUNICATIONS, 47 :267-280 DOI Author Url Publisher Url

ZHANG JF, FANG MTC, NEWLAND DB. 1987. THEORETICAL INVESTIGATION OF A 2 KA DC NITROGEN ARC IN A SUPERSONIC NOZZLE JOURNAL OF PHYSICS D-APPLIED PHYSICS, 20 :368-379 DOI Author Url Publisher Url

FANG MTC, ZHANG JF. 1986. THE DYNAMIC BEHAVIOR OF NOZZLE ARCS IEEE TRANSACTIONS ON PLASMA SCIENCE, 14 :350-356 DOI Author Url Publisher Url

Zhang JF, Duan M, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Thean G, Groseneken G, Asenov A. Time-dependent variation: A new defect-based prediction methodology 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, DOI Author Url Publisher Url Public Url

Conference publication

Chai Z, Zhang W, Zhang JF. 2024. Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices Proceedings of IEEE 15th International Conference on ASIC (ASICON), IEEE 15th International Conference on ASIC 15 :1-4 DOI Publisher Url Public Url

Tok KH, Zhang JF, Brown J, Zhigang J, Zhang WD. 2023. Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps Proceedings of IEEE 15th International Conference on ASIC (ASICON), 2023 IEEE 15th International Conference on ASIC (ASICON 2023) :1-4 DOI Publisher Url Public Url

Liu C, Guo L, Qiao Z, Li J, Ren P, Ye S, Zhou B, Zhang J, Ji Z, Wang R, Huang R. 2022. Realization of NOR logic using Cu/ZnO/Pt CBRAM 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) :132-134 DOI Publisher Url Public Url

Qiao Z, Li J, Liu C, Guo L, Ren P, Ye S, Zhou B, Zhang J, Ji Z, Liu J, Wang R, Huang R. 2022. Realization of Logical NOT Based on Standard DRAM Cells for security-centric Compute-in-Memory applications 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) :333-335 DOI Publisher Url Public Url

Zhang W, Chai Z, Freitas P, Zhang JF, Marsland J. 2022. Relaxation in GeSe Ovonic Threshold Switching Device Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, DOI Publisher Url

Tok KH, Mehedi M, Zhang JF, Ye Z, Ji Z, Zhang W, Marsland J. 2022. Criteria for selecting statistical distribution for the Amplitude of Random Telegraph Noise Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, DOI Publisher Url

Chai Z, Freitas P, Zhang WD, Zhang JF, Marsland J. 2021. True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors IEEE Explore, 2021 IEEE 14th International Conference on ASIC DOI Publisher Url Public Url

Mehedi M, Tok KH, Zhang JF, Ji Z, Ye Z, Zhang WD, Marsland J. 2021. An integrated method for extracting the statistical distribution of RTN time constants 2021 IEEE 14th International Conference on ASIC (ASICON), IEEE 14th International Conference on ASIC (ASICON) DOI Publisher Url Public Url

Ji Z, Zhang J. 2021. Understanding Generated RTN as an Entropy Source for True Random Number Generators 2021 International Conference on IC Design and Technology, ICICDT 2021, DOI Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD. 2020. TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI 2020 China Semiconductor Technology International Conference (CSTIC), China Semiconductor Technology International Conference (CSTIC). DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Mehedi M, Tok D, Ye Z, Ji Z, Zhang WD. 2020. Defect loss and its physical processes 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology DOI Publisher Url Public Url

Freitas P, Zhang WD, Chai Z, Zhang JF, Marsland J. 2020. Impact of RTN and Variability on RRAM-Based Neural Network 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology DOI Publisher Url Public Url

Gao R, Mehedi M, Chen H, Wang X, Zhang JF, Lin XL, He ZY, Chen YQ, Lei DY, Huang Y, En YF, Ji Z, Wang R. 2020. A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs 2020 IEEE International Reliability Physics Symposium (IRPS), 2020 IEEE International Reliability Physics Symposium (IRPS) DOI Author Url Publisher Url Public Url

Zhang JF, Gao R, Ji Z, Zhang WD. 2020. Challenge and solution for characterizing NBTI-generated defects in nanoscale devices 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), International Symposium on the Physical and Failure Analysis of Integrated Circuits DOI Author Url Publisher Url Public Url

Ji Z, Brown J, Zhang J. 2020. TRUE RANDOM NUMBER GENERATOR (TRNG) FOR SECURE COMMUNICATIONS IN THE ERA OF IOT Claeys C, Liang S, Lin Q, Huang R, Wu H, Song P, Lai K, Zhang Y, Zang B, Qu X, Lung HL, Yu W. 2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020), China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url

Hatem F, Chai Z, Zhang WD, Fantini A, Degraeve R, Clima S, Garbin D, Robertson J, Guo Y, Zhang JF, Marsland J, Freitas P, Goux L, Kar G. 2019. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme 2019 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url Public Url

Zhang JF, Manut AB, Gao R, Mehedi M, Ji Z, Zhang WD, Marsland J. 2019. An assessment of RTN-induced threshold voltage jitter 2019 IEEE 13th International Conference on ASIC (ASICON), 2019 13th IEEE International Conference on ASIC DOI Author Url Publisher Url Public Url

Zhang JF, Ji Z, Duan M, Zhang WD, Zhao C. 2019. Voltage step stress: a technique for reducing test time of device ageing 2019 International Conference on IC Design and Technology (ICICDT), THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors 2019 Symposium on VLSI Technology, 2019 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Manut AB, Zhang JF, Ji Z, Zhang WD. 2019. Interaction between random telegraph noise and hot carrier ageing 2019 China Semiconductor Technology International Conference (CSTIC), IEEE China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Ji Z, Zhang X, Zhang J. 2019. Understanding lifetime prediction methodology for In0.53Ga0.47As nFETs under Positive Bias Temperature Instability (PBTI) condition 2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 26th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) DOI Author Url Publisher Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2018. A framework for defects in PBTI and hot carrier ageing 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url

Zhang WD, Chai Z, Ma J, Zhang JF. 2018. Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), ICSICT 2018 DOI Author Url Publisher Url Public Url

Brown J, Gao R, Ji Z, Chen J, Wu J, Zhang JF, Zhou B, Shi Q, Crawford J, Zhang WD. 2018. A low-power and high-speed True Random Number Generator using generated RTN 2018 IEEE Symposium on VLSI Technology, 2018 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2018. Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Ji Z, Gao R, Zhang JF. 2018. Predictive As-Grown-Generation Model for Nbti of Advanced Cmos Devices and Circuits Proceedngs of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Kang J, Yu Z, Wu L, Fang Y, Wang Z, Cai Y, Ji Z, Zhang J, Wang R, Yang Y, Huang R. 2018. Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition Technical Digest - International Electron Devices Meeting, IEDM, :6.4.1-6.4.4 DOI Publisher Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage 2017 IEEE 12th International Conference on ASIC (ASICON), IEEE 12th International Conference on ASIC DOI Publisher Url Public Url

Zhang JF, Ji Z, Zhang WD. 2017. The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits DOI Author Url Publisher Url Public Url

Duan M, Zhang JF, Zhang JC, Zhang WD, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, 2017 IEEE International Reliability Physics Symposium DOI Author Url Publisher Url Public Url

Zhang JF, Ma J, Zhang WD, Ji Z. 2017. DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES 2017 China Semiconductor Technology International Conference (CSTIC), China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang WD, Govoneanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2017. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Qin YJ, Hong ZL, Tang TA. 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 12th IEEE International Conference on ASIC (ASICON) :670-673 DOI Author Url Publisher Url

Gao R, ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes Technical Digest - International Electron Devices Meeting, 2016 IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url

Zhang JF, Duan M, Ji Z, Zhang W. 2016. Hot carrier aging of nano-meter devices 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url

Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url

Chai Z, Ma J, Zhang WD, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Ji Z, Gao R, Zhang JF, Zhang WD, Duan M, Ren P, Arimura H, Wang R, Franco R. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs 2016 IEEE Symposium on VLSI Technology, Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2016. DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY IEEE Explore, 2016 IEEE China Semiconductor Technology International Conference DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM 2015 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Devices Meeting (IEDM) :20.4.1-20.4.4 DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2015. NBTI prediction and its induced time dependent variation Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON), 2015 11th IEEE International Conference on ASIC (ASICON) :1-4 DOI Author Url Publisher Url Public Url

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols Y, Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang WD, Collaert N. 2015. ESD characterization of planar InGaAs devices Reliability Physics Symposium (IRPS), 2015 IEEE International, IEEE International Reliability Physics Symposium (IRPS) :3F.1.1-3F.1.7 DOI Author Url Publisher Url Public Url

Ji Z, Zhang JF, Lin L, Duan M, Zhang WD, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 Symposium on VLSI Technology Digest of Technical Papers, 2015 Symposia on VLSI Technology and Circuits :T36-T37 DOI Author Url Publisher Url Public Url

Ji Z, Ren P, Duan M, Zhang JF. 2015. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era Electron Devices Meeting (IEDM), 2014 IEEE International, Electron Devices Meeting :34.1.1-34.1.4 DOI Author Url Publisher Url Public Url

Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction Electron Devices Meeting (IEDM), 2014 IEEE International, 2014 IEEE International Electron Devices Meeting (IEDM) :34.2.1-34.2.4 DOI Author Url Publisher Url Public Url

Ji Z, Zhang JF, Zhang WEI, Zhang X. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening Reliability Physics Symposium, 2014 IEEE International, Reliability Physics Symposium, 2014 :GD.2.1-GD.2.4 DOI Author Url Publisher Url Public Url

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van Den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Microelectronics Reliability, 54 :2258-2261 DOI

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric Microelectronics Reliability, 54 :2329-2333 DOI

Wang Z, Dissanayake G. 2012. Exploiting Vehicle Motion Information in Monocular SLAM 2012 12TH INTERNATIONAL CONFERENCE ON CONTROL, AUTOMATION, ROBOTICS & VISION (ICARCV), 12th International Conference on Control, Automation, Robotics and Vision (ICARCV) :1030-1035 Author Url

Tang BJ, Zhang WD, Zhang JF, Van den Bosch G, Govoreanu B, Van Houdt J. 2011. Abnormal V_TH/V_FB shift caused by as-grown mobile charges in Al₂O₃ and its impacts on Flash memory cell operations 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url

Lin L, Ji Z, Zhang JF, Zhang WD. 2011. Development of a Fast Technique for Characterizing Interface States SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35 :81-93 DOI Author Url Publisher Url

Hatta SFWM, Soin N, Abd Hadi D, Zhang JF. 2010. NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations MICROELECTRONICS RELIABILITY, 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 50 :1283-1289 DOI Author Url Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for flash memory application Technical Digest - International Electron Devices Meeting, IEDM, DOI Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1834-1837 DOI Author Url Publisher Url

Zhang JF. 2009. Defects and instabilities in Hf-dielectric/SiON stacks (Invited Paper) MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1883-1887 DOI Author Url Publisher Url

Ji Z, Lin L, Zhang JF. 2009. Impact of sensing gate bias on NBTI of Hf-based dielectric stacks Sah RE, Deen JM, Toriumi A, Zhang J, Yota J. SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting 19 :351-362 DOI Author Url Publisher Url

Zheng XFN, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE International Electron Devices Meeting (IEDM 2009) :127-+ Author Url

Zhang JF, Zhao CZ, Chang MH. 2008. Positive charge in HF-based dielectric stacks Proceedings - Electrochemical Society, PV 2008-1 :76-87

Zhang JF, Chang MH, Ji Z, Zhang WD. 2008. Recent progress in understanding the instability and defects in gate dielectrics Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :608-611 DOI Author Url Publisher Url

Wang Y, Zhang JF, Chang MH, Xu M, Tan C. 2008. Characteristics of As-grown Hole Trapping in Silicon Oxynitride p-MOSFETs Subjected to Negative Bias Temperature Stress Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :632-+ DOI Author Url Publisher Url

Zahid MB, Degraeve R, Zhang JF, Groeseneken G. 2007. Impact of process conditions on interface and high-kappa trap density studied by variable T-charge-T-discharge charge pumping ((VTCP)-C-2) MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :1951-1955 DOI Author Url Publisher Url

Efthymiou E, Bernardini S, Volkos SN, Hamilton B, Zhang JF, Uppal HJ, Peaker AR. 2007. Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :2290-2293 DOI Author Url Publisher Url

Zhao CZ, Zhang JF, Zahid MB, Efthymiou E, Lu Y, Hall S, Peaker AR, Groeseneken G, Pantisano L, Degraeve R, De Gendt S, Heyns M. 2007. Hydrogen induced positive charge in Hf-based dielectrics MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :2354-2357 DOI Author Url Publisher Url

Lu Y, Hall S, Buiu O, Zhang JF. 2007. Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients MICROELECTRONIC ENGINEERING, 15th Biennial Conference on Insulating Films on Semiconductors 84 :2390-2393 DOI Author Url Publisher Url

Zahid MB, Degraeve R, Pantisano L, Zhang JF, Groeseneken G. 2007. Defects generation in SiO2/HfO2 studied with variable T-charge-T-discharge charge pumping ((VTCP)-C-2). 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 45th Annual IEEE International Reliability Physics Symposium :55-+ DOI Author Url Publisher Url

Zhang JF, Ji Z, Chang MH, Kaczer B, Groeseneken G. 2007. Real Vth instability of pMOSFETs under practical operation conditions 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, IEEE International Electron Devices Meeting :817-+ DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Chang MH, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and defects in gate dielectric: Similarity and differences between Hf-stacks and SiO2 ECS Transactions, 11 :219-233 DOI Publisher Url

Zheng XF, Zhang WD, Zhang JF, Chang MH, Hao Y. 2007. Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides ECS Transactions, 6 :329-341 DOI Publisher Url

Chang MH, Wang Y, Zhang JF, Zhao CZ, Zhang WD, Xu M. 2007. Contribution of as-grown hole traps to NBTI ECS Transactions, 6 :245-262 DOI Publisher Url

Zhang JF, Chang MH. 2007. An assessment of effective mobility variation during negative bias temperature stress ECS Transactions, 6 :301-311 DOI Publisher Url

Zhang JF. 2006. Properties of electron traps in Hfo2/hfsio stacks Semiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology, :365-381

Chang MH, Zhang JF. 2005. On the trapping kinetics of electron traps created in silicon dioxides Proceedings - Electrochemical Society, PV 2005-01 :199-207

Chang MH, Zhang JF. 2005. An investigation of positive charges formed during negative bias temperature stress Proceedings - Electrochemical Society, PV 2005-01 :293-303

Zhao CZ, Zahid MB, Zhang JF, Groeseneken G, Degraeve R, De Gendt S. 2005. Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks MICROELECTRONIC ENGINEERING, 14th Biennial Conference on Insulating Films on Semiconductors 80 :366-369 DOI Author Url Publisher Url

Zhang JF, Zhao CZ. 2004. A review of positive charge formation in gate oxides Huang R, Yu M, Liou JJ, Hiramoto T, Claeys C. 2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 7th International Conference on Solid-State and Integrated Circuits Technology :781-786 DOI Author Url Publisher Url

Soin N, Zhang JF, Groseneken G. 2002. The dependence of gate current density and substrate bias on trapped electrons IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, :566-570 DOI Publisher Url

Zhang JF, Zhao CZ, Sii HK, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2002. Relation between hole traps and hydrogenous species in silicon dioxides SOLID-STATE ELECTRONICS, 12th Biennial Conference on Insulating Films on Semiconductors 46 :1839-1847 DOI Author Url Publisher Url

Zhang JF, Zhao CZ, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2001. Relation between hole traps and non-reactive hydrogen-induced positive charges MICROELECTRONIC ENGINEERING, 12th Biennial Conference on Insulating Films on Semiconductors 59 :67-72 DOI Author Url Publisher Url

Zhang JF, Sii HK, Groeseneken G, Degraeve R. 2001. Generation of hole traps in silicon dioxides Tan W, Pey KL, Chim WK, Thong J. PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) :50-54 DOI Author Url Publisher Url

Soin N, Zhang JF, Groeseneken G. 2000. MOSFETs reliability : Electron trapping in gate dielectric IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, :104-109

Zhao CZ, Zhang JF, Groeseneken G, Degraeve R, Ellis JN, Beech CD. 2000. Hydrogen induced and plasma charging enhanced positive charge generation in gate oxides Koyanagi M, Egelhardt M, Gabriel CT. 2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 5th International Symposium on Plasma Process-Induced Damage (P2ID) :129-132 DOI Author Url Publisher Url

Sii HK, Zhang JF, Degraeve R, Groeseneken G. 1999. Relation between hydrogen and the generation of interface state precursors MICROELECTRONIC ENGINEERING, 11th Biennial Conference on Insulating Films on Semiconductors 48 :135-138 DOI Author Url Publisher Url

AlKofahi IS, Zhang JF, Groeseneken G. 1997. Generation and annealing of hot hole induced interface states MICROELECTRONIC ENGINEERING, 10th Biennial Conference on Insulating Films on Semiconductors (INFOS 97) 36 :227-230 DOI Author Url Publisher Url

Al-kofahi IS, Zhang JF, Groeseneken G. 1996. The enhanced degradation of MOSFETs damaged by hot holes Massoud HZ, Poindexter EH, Helms CR. PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996, 3rd International Symposium on the Physics and Chemistry of SiO(2) and the Si-SiO(2) Interface. at the Spring Meeting of the Electrochemical-Society 96 :711-721 Author Url

Alkofahi IS, Zhang JF, Groeseneken G. 1996. On the hot hole induced post-stress interface trap generation in MOSFET's 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, IEEE 34th Annual International Reliability Physics Symposium :305-310 DOI Author Url Publisher Url

GOH IS, ZHANG JF, HALL S, ECCLESTON W, WERNER K. 1995. PLASMA OXIDATION OF SI AND SIGE MICROELECTRONIC ENGINEERING, 9th Biennial Conference on Insulating Films on Semiconductors (INFOS 95) 28 :221-224 DOI Author Url Publisher Url

Zhang JF, Eccleston W. 1994. A comparative study of positive and negative bias temperature instabilities in MOSFETs 1994 International Electron Devices and Materials Symposium, EDMS 1994, DOI Publisher Url

Ma J, Zhang WD, Zhang JF, Ji Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposium on VLSI Technology Digest of Technical Papers, 2015 SYMPOSIUM ON VLSI TECHNOLOGY :T34-T35 DOI Author Url Publisher Url Public Url

Wu J, Ren P, Zhang C, Xiao Y, Xue Y, Li Y, Wang X, Zhang L, Liu J, Zhang J, Wang R, Ji Z, Huang R. Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling 2023 International Electron Devices Meeting (IEDM), 69th Annual IEEE International Electron Devices Meeting (IEDM) :1-4 DOI Publisher Url Public Url

Hu Z, Wang G, Chai Z, Zhang W, Garbin D, Degraeve R, Clima S, Ravsher T, Fantini A, Zhang JF, Belmonte A, Kar G. Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices 2024 International Electron Devices Meeting (IEDM), International Electron Device Meeting Publisher Url Public Url

Hu Z, Chai Z, Zhang W, Zhang JF. Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings, 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Publisher Url Public Url

Chapters

Zhang JF. 2014. Oxide defects Bias Temperature Instability for Devices and Circuits 9781461479093 :253-285 DOI Publisher Url

Grasser T. 2013. Bias Temperature Instability for Devices and Circuits Springer Science & Business Media 9781461479093

Zhang JF. Traps Wiley DOI Publisher Url

Zhang JF. Traps :1-10 Wiley DOI Publisher Url

Editorial boards:

Electronics, Member of Editorial Board. 2021

Research Grants Awarded:

Engineering and Physical Sciences Research Council, Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems, W. Zhang and J. Marsland, Grant value (£): 487,200, Duration of research project: 3 Years. 2021

Engineering and Physical Sciences Research Council, Time-Dependent Variability: A test-proven modelling approach for systems verification and power consumption minimization, Z. Ji and W. Zhang, Grant value (£): 517,676, Duration of research project: 4 Years. 2014

Engineering and Physical Research Council, High permittivity dielectrics on Ge for end of roadmap application, W. Zhang, Grant value (£): 462,589, Duration of research project: 3 Years. 2011

Engineering and Physical Sciences Research Council, Performance, degradation and defect structure of MOS devices using high-k materials as gate dielectrics, Grant value (£): 191,097, Duration of research project: 3 Years. 2005

Engineering and Physical Sciences Research Council, Hole trap generation and its role in oxide breakdown, Grant value (£): 165,961, Duration of research project: 3 Years. 2001

Engineering and Physical Sciences Research Council, Post-stress degradation of MOS devices, Grant value (£): 104,542, Duration of research project: 3 Years. 1997

Award:

Best paper, IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). 2019

External committees:

Technical Programme Committee of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), IEEE. 2016

Technical Programme Committe of IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE. 2014

Technical Programme Committee of IEEE International Electron Devices Meeting (IEDM), USA, IEEE. 2013

Technical Programme Committee of China Semiconductor Technology International Conference (CSTIC), IEEE.

External collaboration:

ARM Holding, Andrea Kells. 2014

Glasgow University, Asen Asenov. 2014

Qualcomm Technologies International Ltd, David Vigar. 2014

Synopsys, Teery Ma. 2014

Cambridge University, John Robertson. 2011

Liverpool University, Steve Hall. 2005

Manchester University, Tony Peaker. 2005

Peking University, Ru Huang. 2004

IMEC, The world-leading research institute in Microelectronics, Ben Kaczer, Guido Groesenekwn. 1992

Fellowships:

Fellow, The Higher Education Academy (HEA). 2014