Prof Wei Zhang

Journal article

Hong Y, Zheng X, He Y, Zhang H, Zhang W, Zhang J, Ma X, Hao Y. 2025. Effect of p-NiOx junction termination extension on interface states in NiOx/β-Ga2O3 heterojunction diodes Materials Science in Semiconductor Processing, 185 DOI Publisher Url Public Url

Jian J, Yuan X, Chai Z, Zhou X, Luo Y, He Y, Yue X, Zhang JF, Zhang W, Min T. 2024. Bipolar Random Signal Generation with Electrical Operation Based on Two Magnetic Tunnel Junctions IEEE Electron Device Letters, DOI Publisher Url Public Url

Hong Y, Zheng X, Zhang H, He Y, Zhu T, Zhang W, Zhang J, Ma X, Hao Y. 2024. Fröhlich Scattering Effects on Electron Mobility in β-Ga2O3 Power Devices under High Temperature Physica Status Solidi (B) Basic Research, DOI Publisher Url Public Url

Yue S, Zheng X, Zhang F, Lin D, Bu S, Wang Y, Hu P, Liu J, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the electrical performance degradation mechanism of β-Ga2O3 p-n diode under heavy ion radiation Applied Physics Letters, 125 DOI Publisher Url

Yue S, Zheng X, Zhang F, Hong Y, Wang Y, Zhu T, Gong S, Wang X, Lv L, Cao Y, Zhang W, Zhang J, Ma X, Hao Y. 2024. Investigation on Electrical Performance Degradation Mechanism of β-GaO Schottky Barrier Diodes Under 3 MeV Proton Radiation IEEE Transactions on Electron Devices, 71 :4584-4589 DOI Publisher Url

Zhang H, Zheng X, Lin D, Hong Y, Zhou J, Lv L, Cao Y, Han H, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under on-state with High Drain Bias IEEE Transactions on Electron Devices, :1-5 DOI Publisher Url Public Url

Hong Y, Zheng X, Zhang H, He Y, Zhu T, Liu K, Li A, Ma X, Zhang W, Zhang J, Hao Y. 2024. Oxygen Stoichiometry Engineering in P-Type NiOx for High-Performance NiO/Ga2O3 Heterostructure p–n Diode Physica Status Solidi - Rapid Research Letters, DOI Publisher Url

Yuan X, Jian J, Chai Z, Wei H, Zhou X, Wen Y, Liu Y, Yan W, He Y, Zhang JF, Zhang W, Min T. 2024. Arbitrary Modulation of Average Dwell Time in Discrete-Time Markov Chains based on Tunneling Magnetoresistance Effect IEEE Electron Device Letters, DOI Publisher Url Public Url

Zhang H, Zheng X, Lin D, Lv L, Cao Y, Hong Y, Zhang F, Wang X, Wang Y, Zhang W, Zhang J, Ma X, Hao Y. 2024. Study on the single-event burnout mechanism of GaN MMIC power amplifiers Applied Physics Letters, 124 DOI Publisher Url Public Url

Brown J, Tok KH, Gao R, Ji Z, Zhang W, Marsland JS, Chiarella T, Franco J, Kaczer B, Linten D, Zhang JF. 2023. A Pragmatic Model to Predict Future Device Aging IEEE Access, 11 :127725-127736 DOI Publisher Url Public Url

Yuan X, Jian J, Chai Z, An S, Gao Y, Zhou X, Zhang JF, Zhang W, Min T. 2023. Markov Chain Signal Generation based on Single Magnetic Tunnel Junction IEEE Electron Device Letters, :1-1 DOI Publisher Url Public Url

Silva C, Deuermeier J, Zhang W, Carlos E, Barquinha P, Martins R, Kiazadeh A. 2023. Perspective: Zinc-Tin Oxide Based Memristors for Sustainable and Flexible In-Memory Computing Edge Devices Advanced Electronic Materials, DOI Publisher Url Public Url

Tok KH, Zhang J, Brown J, Ji Z, Zhang W, Marsland J. 2023. Characterizing and Modelling RTN under real circuit bias conditions IEEE Transactions on Electron Devices, 70 :2424-2430 DOI Publisher Url Public Url

Hu Z, Zhang W, Degraeve R, Garbin D, Chai Z, Saxena N, Freitas P, Fantini A, Ravsher T, Clima S, Zhang J, Delhougne R, Goux L, Kar G. 2022. New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors IEEE Transactions on Electron Devices, DOI Publisher Url Public Url

Tok KH, Zhang JF, Brown J, Ye Z, Ji Z, Zhang WD, Marsland JS. 2022. AC RTN: Testing, Modeling, and Prediction IEEE Transactions on Electron Devices, :1-7 DOI Publisher Url Public Url

Du Y, Shao W, Chai Z, Zhao H, Diao Q, Gao Y, Yuan X, Wang Q, Li T, Zhang WD, Zhang JF, Min T. 2022. Synaptic 1/f noise injection for overfitting suppression in hardware neural networks Neuromorphic Computing and Engineering, 2 DOI Publisher Url Public Url

Zhou X, Hu Z, Chai Z, Zhang WD, Clima S, Degraeve R, Zhang JF, Fantini A, Garbin D, Delhougne R, Goux L, Kar GS. 2022. Impact of relaxation on the performance of GeSe true random number generator based on Ovonic threshold switching IEEE Electron Device Letters, 43 :1061-1064 DOI Publisher Url Public Url

Tok KH, Mehedi M, Zhang JF, Brown J, Ye Z, Ji Z, Zhang W, Marsland JS, Asenov A, Georgiev V. 2022. An Integral Methodology for Predicting Long Term RTN IEEE Transactions on Electron Devices, DOI Publisher Url Public Url

Zhang JF, Gao R, Duan M, Ji Z, Zhang WD, Marsland J. 2022. Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction Electronics, 11 DOI Publisher Url Public Url

Pereira M, Deuermeier J, Zhang WD, Freitas P, Barquinha P, Martins R, Fortunato E, Kiazadeh A. 2022. Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks APL Materials, 10 DOI Author Url Publisher Url Public Url

Chai Z, Zhang WD, Clima S, Hatem F, Degraeve R, Diao Q, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2021. Cycling induced metastable degradation in GeSe Ovonic threshold switching selector IEEE Electron Device Letters, 42 :1148-1451 DOI Author Url Publisher Url Public Url

Gao R, Ma J, Lin X, Zhang X, En Y, Lu G, Huang Y, Ji Z, Yang H, Zhang WD, Zhang JF. 2021. A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs with GeO2/Ge and Si-cap/Ge Gate Stack IEEE Journal of the Electron Devices Society, 9 :539-544 DOI Author Url Publisher Url Public Url

Xue F, He X, Wang Z, Retamal JRD, Chai Z, Lingling J, Chenhui Z, Fang H, Chai Y, Zhang WD, Alshareef H, Ji Z, Li L-J, He J-H, Zhang X. 2021. Giant ferroelectric resistance switching controlled by a modulatory terminal for low-power neuromorphic in-memory computing Advanced Materials, 33 DOI Author Url Publisher Url Public Url

Mehedi M, Tok KH, Ye Z, Zhang JF, Ji Z, Zhang WD, Marsland J. 2021. On the accuracy in modelling the statistical distribution of Random Telegraph Noise Amplitude IEEE Access, DOI Author Url Publisher Url Public Url

Mehedi M, Tok KH, Zhang JF, Ji Z, Ye Z, Zhang WD, Marsland JS. 2020. An assessment of the statistical distribution of Random Telegraph Noise Time Constants IEEE Access, 8 :182273-182282 DOI Author Url Publisher Url Public Url

Joksas D, Freitas P, Chai Z, Ng WH, Buckwell M, Li C, Zhang WD, Xia QF, Kenyon AJ, Mehonic A. 2020. Committee Machines—A Universal Method to Deal with Non-Idealities in Memristor-Based Neural Networks Nature Communications, 11 DOI Author Url Publisher Url Public Url

Chai Z, Freitas P, Zhang WD, Hatem F, Degraeve R, Clima S, Zhang J, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2020. Stochastic computing based on volatile GeSe ovonic threshold switching selectors IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Gao R, Shi Y, He Z, Chen Y, En Y, Huang Y, Ji Z, Zhang JF, Zhang WD, Zheng X, Zhang J, Liu Y. 2020. A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT IEEE Journal of the Electron Devices Society, 8 :905-910 DOI Author Url Publisher Url Public Url

Duffy S, Benbakhti B, Zhang WD, Ahmeda K, Kalna K, Boucherta M, Mattalah M, Chahdi HO, Bourzgui N-E, Soltani A. 2020. A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices, 67 :1924-1930 DOI Author Url Publisher Url Public Url

Chai Z, Wei S, Zhang WD, Brown J, Degraeve R, Salim F, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. GeSe-based Ovonic Threshold Switching Volatile True Random Number Generator IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Guo Y, Li H, Zhang WD, Robertson J. 2019. Structural changes during the switching transition of Chalcogenide Selector devices Applied Physics Letters, 115 DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar GS. 2019. Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors IEEE Electron Device Letters, :1-1 DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Degraeve R, Zhang JF, Marsland J, Fantini A, Garbin D, Clima S, Goux L, Kar GS. 2019. RTN in GexSe1-x OTS Selector Devices Microelectronic Engineering, 215 DOI Author Url Publisher Url Public Url

Manut A, Gao R, Zhang JF, Ji Z, Mehedi M, Vigar D, Asenov A, Kaczer B. 2019. Trigger-When-Charged: A technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd IEEE Transactions on Electron Devices, 66 :1482-1488 DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang WD, Zhang JF, Marsland J, Govoreanu B, Degraeve R, Goux L, Kar G. 2018. TDDB mechanism in a-Si/TiO2 non-filamentary RRAM device IEEE Transactions on Electron Devices, 66 :777-784 DOI Author Url Publisher Url Public Url

Lanza M, Wong HSP, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari-Köpe B, Yalon E, Kenyon A, Buckwell M, Mehonic A, Shluger A, Li H, Hou TH, Hudec B, Akinwande D, Ge R, Ambrogio S, Roldan JB, Miranda E, Suñe J, Pey KL, Wu X, Raghavan N, Wu E, Lu WD, Navarro G, Zhang W, Wu H, Li R, Holleitner A, Wurstbauer U, Lemme MC, Liu M, Long S, Liu Q, Lv H, Padovani A, Pavan P, Valov I, Jing X, Han T, Zhu K, Chen S, Hui F, Shi Y. 2018. Recommended Methods to Study Resistive Switching Devices Advanced Electronic Materials, DOI Author Url Publisher Url Public Url

Chai Z, Freitas P, Zhang WD, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS. 2018. Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network IEEE Electron Device Letters, DOI Author Url Publisher Url Public Url

Ji Z, Gao R, Zhang JF, Marsland J, Zhang WD. 2018. As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI) IEEE Transactions on Electron Devices, 65 :3662-3668 DOI Author Url Publisher Url Public Url

Duffy SJ, Benbakhti B, Kalna K, Boucherta M, Zhang WD, Bourzgui N, Soltani A. 2018. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs IEEE Access, DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Freitas P, Hatem F, Zhang JF, Marsland J, Govoreanu B, Goux L, Kar GS, Hall S, Chalker P, Robertson J. 2018. The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique IEEE Electron Device Letters, 39 :955-958 DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang WD, Zhang JF, Ji Z, Benbakhti B, Govoreanu B, Simoen E, Goux L, Belmonte A, Degraeve R, Kar G, Jurczak M. 2018. Investigation of pre-existing and generated defects in non-filamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution IEEE Transactions on Electron Devices, 65 :970-977 DOI Author Url Publisher Url Public Url

Zhang JF, Ji Z, Zhang WEI. 2017. As-grown-Generation (AG) Model of NBTI: a shift from fitting test data to prediction Microelectronics Reliability, DOI Author Url Publisher Url Public Url

Ahmeda K, Ubochi B, Benbakhti B, Duffy SJ, Soltani A, Zhang WD, Kalna K. 2017. Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures IEEE Access, 5 :20946-20952 DOI Author Url Publisher Url Public Url

Ji Z, Gao R, Manut AB, Zhang JF, Franco J, Hatta SWM, Zhang W, Kaczer B, Linten D, Groeseneken G. 2017. NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling IEEE Transactions on Electron Devices, 64 :4011-4017 DOI Author Url Publisher Url Public Url

Benbakhti B, Duffy SJ, Mattalah M, Zhang WD, Bouchilaoun M, Boucherta M, Kalna K, Bourzgui N, Maher H, Soltani A. 2017. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate ECS Journal of Solid State Science and Technology, 6 DOI Author Url Publisher Url Public Url

Sedghi N, Li H, Brunell IF, Dawson K, Guo Y, Potter RJ, Gibbon JT, Dhanak VR, Zhang WD, Zhang JF, Hall S, Robertson J, Chalker PR. 2017. Enhanced switching stability in Ta 2 O 5 resistive RAM by fluorine doping Applied Physics Letters, 111 DOI Author Url Publisher Url Public Url

Chai Z, Ma J, Zhang WD, Govoreanu B, Zhang JF, Ji Z, Jurczak M. 2017. Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices, 64 :4099-4105 DOI Author Url Publisher Url Public Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Asenov A. 2017. Key issues and solutions for characterizing hot carrier aging of nano-meter scale nMOSFETs IEEE Transactions on Electron Devices, 64 :2478-2484 DOI Author Url Publisher Url Public Url

Sedghi N, Li H, Brunell IF, Dawson K, Potter RJ, Guo Y, Gibbon JT, Dhanak VR, Zhang W, Zhang JF, Robertson J, Hall S, Chalker PR. 2017. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM Applied Physics Letters, 110 DOI Author Url Publisher Url Public Url

Gao R, Manut AB, Ji Z, Ma J, Duan M, Zhang JF, Franco J, Hatta SFWM, Zhang WD, Kaczer B, Vigar D, Linten D, Groeseneken G. 2017. Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation IEEE Transactions on Industrial Electronics, 64 :1467-1473 DOI Author Url Publisher Url Public Url

Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Arimura H. 2016. A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 :3830-3836 DOI Author Url Publisher Url Public Url

Duan M, Zhang JF, Ji Z, Zhang WD, Vigar D, Asenov A, Gerrer L, Chandra V, Aitken R, Kaczer B. 2016. Insight into Electron Traps and Their Energy Distribution under Positive Bias Temperature Stress and Hot Carrier Aging IEEE Transactions on Electron Devices, 63 :3642-3648 DOI Author Url Publisher Url Public Url

Manut AB, Zhang JF, Duan M, Ji Z, Zhang WD, kaczer B, Schram T, Horiguchi, N, Groeseneken G. 2015. Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation IEEE Journal of the Electron Devices Society, DOI Author Url Publisher Url Public Url

Ji Z, Zhang JF, Zhang WD, Gao R, Zhang X. 2015. An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel IEEE Transactions on Electron Devices, 62 :3633-3639 DOI Author Url Publisher Url Public Url

Gao R, Ji Z, Zhang JF, Zhang WD, Hatta SFWM, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2015. A Discharge-Based Pulse Technique for Probing the Energy Distribution of Positive Charges in Gate Dielectric IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 28 :221-226 DOI Author Url Publisher Url Public Url

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations MICROELECTRONICS RELIABILITY, 54 :2258-2261 DOI Author Url Publisher Url

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric MICROELECTRONICS RELIABILITY, 54 :2329-2333 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2014. Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 :3081-3089 DOI Author Url Publisher Url Public Url

Tang B, Zhang W, Toledano-Luque M, Zhang JF, Degraeve R, Ji Z, Arreghini A, Van den Bosch G, Van Houdt J. 2014. Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel IEEE Transactions on Electron Devices, 61 :1501-1507 DOI Author Url Publisher Url

Tang B, Zhang WD, Degraeve R, Breuil L, Blomme P, Zhang JF, Ji Z, Zahid M, Toledano-Luque M, Van den Bosch G, Van Houdt J. 2014. Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-kappa Intergate Dielectrics of Flash Memory Cells IEEE Transactions on Electron Devices, 61 :1299-1306 DOI Author Url Publisher Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker PR. 2014. Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With GeO2/Al2O3 Stack IEEE Transactions on Electron Devices, 61 :1307-1315 DOI Author Url Publisher Url Public Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Zhang WD, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2014. Energy Distribution of Positive Charges in Al2O3/GeO2/Ge pMOSFETs IEEE ELECTRON DEVICE LETTERS, 35 :160-162 DOI Author Url Publisher Url Public Url

Ji Z, Hatta SWM, Zhang JF, Zhang W, Niblock J, Bachmayr P, Stauffer L, Wright K, Greer S. 2014. A new technique for probing the energy distribution of positive charges in gate dielectric 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), :73-78 DOI Author Url Publisher Url

Robinson C, Zhang WD, Tang B, Zheng XF, Zhang JF. 2014. Instabilities induced by electron trapping/detrapping in high-k gate dielectrics of Flash memories: Evaluation and Suppression Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), DOI Author Url Publisher Url

Zhang JF, Duani M, Ji Z, Zhang W. 2014. TIME-DEPENDENT DEVICE-TO-DEVICE VARIATION ACCOUNTING FOR WITHIN-DEVICE FLUCTUATION (TVF): A NEW CHARACTERIZATION TECHNIQUE Tang TA, Zhou J. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), DOI Author Url Publisher Url

Ji Z, Gillbert J, Zhang JF, Zhang W. 2013. A new Ultra-Fast Single Pulse technique (UFSP) for channel effective mobility evaluation in MOSFETs IEEE International Conference on Microelectronic Test Structures, :64-69 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation IEEE Transactions on Electron Devices, 60 :2505-2511 DOI Author Url Publisher Url

Tang B, Robinson C, Zhang WD, Zhang JF, Degraeve R, Blomme P, Toledano-Luque M, Van Den Bosch G, Govoreanu B, Van Houdt J. 2013. Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks IEEE Transactions on Electron Devices, 60 :2261-2267 DOI Author Url Publisher Url

Tang B, Toledano-Luque M, Zhang WD, Van Den Bosch G, Degraeve R, Zhang JF, Van Houdt J. 2013. Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization Microelectronic Engineering, 109 :39-42 DOI Author Url Publisher Url

Ma J, Zhang JF, Ji Z, Benbakhti B, Duan M, Zhang W, Zheng XF, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2013. Towards understanding hole traps and NBTI of Ge/GeO2/Al 2O3 structure Microelectronic Engineering, 109 :43-45 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2013. New insights into defect loss, slowdown, and device lifetime enhancement IEEE Transactions on Electron Devices, 60 :413-419 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang W. 2013. Defect losses under different processes, stress, recovery, and anneal conditions Lin Q, Claeys C, Huang D, Wu H, Kuo Y, Huang R, Lai K, Zhang Y, Guo Z, Wang S, Liu R, Jiang T, Song P, Lam C, Xiong J, Chen K. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 52 :929-934 DOI Author Url Publisher Url

Hatta SWM, Ji Z, Zhang JF, Duan M, Zhang WD, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Energy Distribution of Positive Charges in Gate Dielectric: Probing Technique and Impacts of Different Defects IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 :1745-1753 DOI Author Url Publisher Url

Ji Z, Hatta SFWM, Zhang JF, Ma JG, Zhang W, Soin N, Kaczer B, De Gendt S, Groeseneken G. 2013. Negative Bias Temperature Instability Lifetime Prediction: Problems and Solutions 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Ma JG, Zhang W, Kaczer B, Schram T, Ritzenthaler R, Groeseneken G, Asenov A. 2013. Key issues and techniques for characterizing Time-dependent Device-to-Device Variation of SRAM 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url

Zhang JF, Ji Z, Duan M, Zhang W. 2012. Development of new characterisation technique for interface states beyond bandgap ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, DOI Author Url Publisher Url

Zhang WD, Robinson C, Zheng XF, Zhang JF. 2012. Characterisation of electron traps in high-k dielectric stacks for Flash memory applications using fast pulse techniques ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, DOI Author Url Publisher Url

Benbakhti B, Zhang JF, Ji Z, Zhang W, Mitard J, Kaczer B, Groeseneken G, Hall S, Robertson J, Chalker P. 2012. Characterization of electron traps in Si-capped Ge MOSFETs with HfO 2/SiO2 gate stack IEEE Electron Device Letters, 33 :1681-1683 DOI Author Url Publisher Url

Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2012. Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :783-790 DOI Author Url Publisher Url

Duan M, Zhang JF, Ji Z, Zhang W, Kaczer B, De Gendt S, Groeseneken G. 2012. Defect Loss: A New Concept for Reliability of MOSFETs IEEE ELECTRON DEVICE LETTERS, 33 :480-482 DOI Author Url Publisher Url

Ji Z, Zhang JF, Zhang W. 2012. A New Mobility Extraction Technique Based on Simultaneous Ultrafast I_d-V_g and C_cg-V_g Measurements in MOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1906-1914 DOI Author Url Publisher Url

Tang B, Zhang WD, Zhang JF, Van den Bosch G, Toledano-Luque M, Govoreanu B, Van Houdt J. 2012. Investigation of Abnormal V_TH/V_FB Shifts Under Operating Conditions in Flash Memory Cells With Al₂O₃ High-κ Gate Stacks IEEE TRANSACTIONS ON ELECTRON DEVICES, 59 :1870-1877 DOI Author Url Publisher Url

Zheng XF, Robinson C, Zhang WD, Zhang JF, Govoreanu B, Van Houdt J. 2011. Electron Trapping in HfAlO High-kappa Stack for Flash Memory Applications: An Origin of V-th Window Closure During Cycling Operations IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1344-1351 DOI Author Url Publisher Url

Lin L, Ji Z, Zhang JF, Zhang WD, Kaczer B, De Gendt S, Groeseneken G. 2011. A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States IEEE TRANSACTIONS ON ELECTRON DEVICES, 58 :1490-1498 DOI Author Url Publisher Url

Wang Y, Li H, Zhang W. 2011. Performance analysis of cooperative relay topology Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 38 :80-84 DOI

Zhang JF, Ji Z, Lin L, Zhang W. 2010. Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, :1600-1603 DOI Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2010. A New Multipulse Technique for Probing Electron Trap Energy Distribution in High-kappa Materials for Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2484-2492 DOI Author Url Publisher Url

Aguado DR, Govoreanu B, Zhang WD, Jurczak M, De Meyer K, Van Houdt J. 2010. A Novel Trapping/Detrapping Model for Defect Profiling in High-k Materials Using the Two-Pulse Capacitance-Voltage Technique IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :2726-2735 DOI Author Url Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Aguado DR, Zhang JF, Van Houdt J. 2010. Energy and Spatial Distributions of Electron Traps Throughout SiO2/Al2O3 Stacks as the IPD in Flash Memory Application IEEE TRANSACTIONS ON ELECTRON DEVICES, 57 :288-296 DOI Author Url Publisher Url

Ji Z, Zhang JF, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns MM. 2009. An assessment of the mobility degradation induced by remote charge scattering APPLIED PHYSICS LETTERS, 95 DOI Author Url Publisher Url

Zhang WD, Govoreanu B, Zheng XF, Aguado DR, Rosmeulen M, Blomme P, Zhang JF, Van Houdt J. 2008. Two-pulse C-V: A new method for characterizing electron traps in the bulk of SiO2/high-k dielectric stacks IEEE ELECTRON DEVICE LETTERS, 29 :1043-1046 DOI Author Url Publisher Url

Chang MH, Zhang JF, Zhang WD. 2006. Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides IEEE TRANSACTIONS ON ELECTRON DEVICES, 53 :1347-1354 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Zhao CZ, Chang MH, Groeseneken G, Degraeve R. 2006. Electrical signature of the defect associated with gate oxide breakdown IEEE ELECTRON DEVICE LETTERS, 27 :393-395 DOI Author Url Publisher Url

Ma XH, Hao Y, Sun BG, Gao HX, Ren HX, Zhang JC, Zhang JF, Zhang XJ, Zhang WD. 2006. Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process CHINESE PHYSICS, 15 :195-198 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Lalor MJ, Burton DR, Groeseneken G, Degraeve R. 2003. Effects of detrapping on electron traps generated in gate oxides SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18 :174-182 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken GV, Degraeve R. 2002. Two types of neutral electron traps generated in the gate silicon dioxide IEEE TRANSACTIONS ON ELECTRON DEVICES, 49 :1868-1875 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. On the interface states generated under different stress conditions APPLIED PHYSICS LETTERS, 79 :3092-3094 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Lalor M, Burton D, Groeseneken G, Degraeve R. 2001. On the mechanism of electron trap generation in gate oxides MICROELECTRONIC ENGINEERING, 59 :89-94 DOI Author Url Publisher Url

Zhang WD, Zhang JF, Uren MJ, Groeseneken G, Degraeve R, Lalor M, Burton D. 2001. Dependence of energy distributions of interface states on stress conditions MICROELECTRONIC ENGINEERING, 59 :95-99 DOI Author Url Publisher Url

Hao Y, Zhu JG, Ren HX, Zhang WD. 2001. The gate-oxide breakdown effect coupled by channel hot-carrier-effect in SOI MOSFET's CHINESE JOURNAL OF ELECTRONICS, 10 :204-209 Author Url

Zhang JF, Duan M, Ji Z, Zhang WD, Kaczer B, Schram T, Ritzenthaler R, Thean G, Groseneken G, Asenov A. Time-dependent variation: A new defect-based prediction methodology 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, DOI Author Url Publisher Url Public Url

Conference publication

Hu Z, Wang G, Chai Z, Zhang W, Garbin D, Degraeve R, Clima S, Ravsher T, Fantini A, Zhang J, Belmonte A, Kar G. 2024. Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices International Electron Device Meeting 2024 Publisher Url Public Url

Chai Z, Zhang W, Zhang JF. 2024. Stochastic Computing Based on Volatile Ovonic Threshold Switching Devices Proceedings of IEEE 15th International Conference on ASIC (ASICON), IEEE 15th International Conference on ASIC 15 :1-4 DOI Publisher Url Public Url

Tok KH, Zhang JF, Brown J, Zhigang J, Zhang WD. 2023. Extracting statistical distributions of RTN originating from both acceptor-like and donor-like traps Proceedings of IEEE 15th International Conference on ASIC (ASICON), 2023 IEEE 15th International Conference on ASIC (ASICON 2023) :1-4 DOI Publisher Url Public Url

Zhang W, Chai Z, Freitas P, Zhang JF, Marsland J. 2022. Relaxation in GeSe Ovonic Threshold Switching Device Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, DOI Publisher Url

Tok KH, Mehedi M, Zhang JF, Ye Z, Ji Z, Zhang W, Marsland J. 2022. Criteria for selecting statistical distribution for the Amplitude of Random Telegraph Noise Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022, DOI Publisher Url

Chai Z, Freitas P, Zhang WD, Zhang JF, Marsland J. 2021. True Random Number Generator Based on Switching Probability of Volatile Gexse1-X Ovonic Threshold Switching Selectors IEEE Explore, 2021 IEEE 14th International Conference on ASIC DOI Publisher Url Public Url

Mehedi M, Tok KH, Zhang JF, Ji Z, Ye Z, Zhang WD, Marsland J. 2021. An integrated method for extracting the statistical distribution of RTN time constants 2021 IEEE 14th International Conference on ASIC (ASICON), IEEE 14th International Conference on ASIC (ASICON) DOI Publisher Url Public Url

Duan M, Zhang JF, Ji Z, Zhang WD. 2020. TOWARDS UNDERSTANDING INTERACTION BETWEEN HOT CARRIER AGEING AND PBTI 2020 China Semiconductor Technology International Conference (CSTIC), China Semiconductor Technology International Conference (CSTIC). DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Mehedi M, Tok D, Ye Z, Ji Z, Zhang WD. 2020. Defect loss and its physical processes 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology DOI Publisher Url Public Url

Freitas P, Zhang WD, Chai Z, Zhang JF, Marsland J. 2020. Impact of RTN and Variability on RRAM-Based Neural Network 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), IEEE 15th International Conference on Solid-State and Integrated-Circuit Technology DOI Publisher Url Public Url

Zhang JF, Gao R, Ji Z, Zhang WD. 2020. Challenge and solution for characterizing NBTI-generated defects in nanoscale devices 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), International Symposium on the Physical and Failure Analysis of Integrated Circuits DOI Author Url Publisher Url Public Url

Hatem F, Chai Z, Zhang WD, Fantini A, Degraeve R, Clima S, Garbin D, Robertson J, Guo Y, Zhang JF, Marsland J, Freitas P, Goux L, Kar G. 2019. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme 2019 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url Public Url

Zhang JF, Manut AB, Gao R, Mehedi M, Ji Z, Zhang WD, Marsland J. 2019. An assessment of RTN-induced threshold voltage jitter 2019 IEEE 13th International Conference on ASIC (ASICON), 2019 13th IEEE International Conference on ASIC DOI Author Url Publisher Url Public Url

Zhang JF, Ji Z, Duan M, Zhang WD, Zhao C. 2019. Voltage step stress: a technique for reducing test time of device ageing 2019 International Conference on IC Design and Technology (ICICDT), THE 17th INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY DOI Author Url Publisher Url Public Url

Chai Z, Zhang W, Degraeve R, Clima S, Hatem F, Zhang JF, Freitas P, Marsland J, Fantini A, Garbin D, Goux L, Kar G. 2019. Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors 2019 Symposium on VLSI Technology, 2019 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Manut AB, Zhang JF, Ji Z, Zhang WD. 2019. Interaction between random telegraph noise and hot carrier ageing 2019 China Semiconductor Technology International Conference (CSTIC), IEEE China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2018. A framework for defects in PBTI and hot carrier ageing 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 14th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url

Zhang WD, Chai Z, Ma J, Zhang JF. 2018. Analysis of switching, degradation and failure mechanisms by RTN signals in non-filamentary (a-VMCO) RRAM devices 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), ICSICT 2018 DOI Author Url Publisher Url Public Url

Duffy SJ, Benbakhti B, Zhang WD, Kalna K, Ahmeda K, Boucherta M, Bourzgui N, Maher H, Soltani A. 2018. A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs 2018 13th European Microwave Integrated Circuits Conference (EuMIC), European Microwave Week 2018 DOI Author Url Publisher Url Public Url

Brown J, Gao R, Ji Z, Chen J, Wu J, Zhang JF, Zhou B, Shi Q, Crawford J, Zhang WD. 2018. A low-power and high-speed True Random Number Generator using generated RTN 2018 IEEE Symposium on VLSI Technology, 2018 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2018. Assessing the Accuracy of Statistical Properties Extracted from a Limited Number of Device Under Test for Time Dependent Variations Proceeding of IEEE China Semiconductor Technology International Conference 2018 (CSTIC 2018), 2018 China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage 2017 IEEE 12th International Conference on ASIC (ASICON), IEEE 12th International Conference on ASIC DOI Publisher Url Public Url

Zhang JF, Ji Z, Zhang WD. 2017. The As-grown-Generation (AG) model: A reliable model for reliability prediction under real use conditions 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE 24th International Symposium on The Physical and Failure Analysis of Integrated Circuits DOI Author Url Publisher Url Public Url

Ahmeda K, Ubochi B, Kalna K, Benbakhti B, Duffy SJ, Zhang WD, Soltani A. 2017. Self-Heating and Polarization Effects in AlGaN/AlN/GaN/AlGaN Based Devices Proceedings of the European Microwave Integrated Circuits COnference, European Microwave Week 2017 :37-40 DOI Author Url Publisher Url Public Url

Duffy SJ, Gerbedoen JC, Mattalah M, Benbakhti B, Zhang W, Boucherta M, Kalna K, Maher H, Soltani A. 2017. Low Ohmic Contact Resistance for AlGaN/GaN HEMTs with high Al Concentration & Si-HP [111] Substrate UK Semiconductors :149-149

Duan M, Zhang JF, Zhang JC, Zhang WD, Ji Z, Benbakhti B, Zhang XF, Hao Y, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G, Asenov A. 2017. Interaction between Hot Carrier Aging and PBTI Degradation in nMOSFETs: Characterization, Modelling and Lifetime Prediction IEEE International Reliability Physics Symposium Proceedings, 2017 IEEE International Reliability Physics Symposium DOI Author Url Publisher Url Public Url

Zhang JF, Ma J, Zhang WD, Ji Z. 2017. DEFECTS AND LIFETIME PREDICTION FOR GE PMOSFETS UNDER AC NBTI STRESSES 2017 China Semiconductor Technology International Conference (CSTIC), China Semiconductor Technology International Conference (CSTIC) DOI Author Url Publisher Url Public Url

Ma J, Chai Z, Zhang WD, Govoneanu B, Zhang JF, Ji Z, Benbakhti B, Groeseneken G, Jurczak M. 2017. Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement Technical Digest - International Electron Devices Meeting, IEEE International Electron Devices Meeting DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang W. 2017. Hot carrier aging of nano-scale devices: characterization method, statistical variation, and their impact on use voltage Qin YJ, Hong ZL, Tang TA. 2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 12th IEEE International Conference on ASIC (ASICON) :670-673 DOI Author Url Publisher Url

Gao R, ji Z, Hatta SM, Zhang JF, Franco J, Kaczer B, Zhang W, Duan M, De Gendt S, Linten D, Groeseneken G, Bi J, Liu M. 2016. Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes Technical Digest - International Electron Devices Meeting, 2016 IEEE International Electron Device Meeting (IEDM) DOI Author Url Publisher Url

Zhang JF, Duan M, Ji Z, Zhang W. 2016. Hot carrier aging of nano-meter devices 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url

Zhang W, Chai Z, Ma J, Zhang J, Ji Z. 2016. Analysis of RTN signals in Resistive-Switching RAM device and its correlation with device operations 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) DOI Author Url Publisher Url Public Url

Chai Z, Ma J, Zhang WD, Govoreanu B, Simoen E, Zhang JF, Ji Z, Gao R, Groeseneken G, Jurczak M. 2016. RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism Digest of Technical Papers - Symposium on VLSI Technology, IEEE 2016 Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Ji Z, Gao R, Zhang JF, Zhang WD, Duan M, Ren P, Arimura H, Wang R, Franco R. 2016. Understanding charge traps for optimizing Si-passivated Ge nMOSFETs 2016 IEEE Symposium on VLSI Technology, Symposia on VLSI Technology and Circuits DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2016. DEFECTS FOR RANDOM TELEGRAPH NOISE AND NEGATIVE BIAS TEMPERATURE INSTABILITY IEEE Explore, 2016 IEEE China Semiconductor Technology International Conference DOI Author Url Publisher Url Public Url

Claeys C, de Andrade MGC, Chai Z, Fang W, Govoreanu B, Kaczer B, Zhang W, Simoen E. 2016. Random Telegraph Signal Noise in Advanced High Performance and Memory Devices 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 31st Symposium on Microelectronics Technology and Devices (SBMicro) DOI Author Url Publisher Url

Zhang JF, Duan M, Manut A, Ji Z, Zhang W, Asenov A, Gerrer L, Reid D, Razaidi H, Vigar D, Chandra V, Aitken R, Kaczer B, Groeseneken G. 2015. Hot carrier aging and its variation under use-bias: kinetics, prediction, impact on Vdd and SRAM 2015 IEEE International Electron Devices Meeting (IEDM), IEEE International Electron Devices Meeting (IEDM) :20.4.1-20.4.4 DOI Author Url Publisher Url Public Url

Zhang JF, Duan M, Ji Z, Zhang WD. 2015. NBTI prediction and its induced time dependent variation Proceedings of 2015 11th IEEE International Conference on ASIC (ASICON), 2015 11th IEEE International Conference on ASIC (ASICON) :1-4 DOI Author Url Publisher Url Public Url

Ji Z, Linten D, Boschke R, Hellings G, Chen SH, Alian A, Zhou D, Mols Y, Ivanov T, Franco J, Kaczer B, Zhang X, Gao R, Zhang JF, Zhang WD, Collaert N. 2015. ESD characterization of planar InGaAs devices Reliability Physics Symposium (IRPS), 2015 IEEE International, IEEE International Reliability Physics Symposium (IRPS) :3F.1.1-3F.1.7 DOI Author Url Publisher Url Public Url

Ji Z, Zhang JF, Lin L, Duan M, Zhang WD, Zhang X, Gao R, Kaczer B, Franco J, Schram T, Horiguchi N, De Gendt S, Groeseneken G. 2015. A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias 2015 Symposium on VLSI Technology Digest of Technical Papers, 2015 Symposia on VLSI Technology and Circuits :T36-T37 DOI Author Url Publisher Url Public Url

Ji Z, Ren P, Duan M, Zhang JF. 2015. New Insights into the Design for End-of-life Variability of NBTI in Scaled High-κ/Metal-gate Technology for the nano-Reliability Era Electron Devices Meeting (IEDM), 2014 IEEE International, Electron Devices Meeting :34.1.1-34.1.4 DOI Author Url Publisher Url Public Url

Ma J, Zhang WD, Zhang JF, Benbakhti B, Ji Z, Mitard J, Franco J, Kaczer B, Groeseneken G. 2014. NBTI of Ge pMOSFETs: understanding defects and enabling lifetime prediction Electron Devices Meeting (IEDM), 2014 IEEE International, 2014 IEEE International Electron Devices Meeting (IEDM) :34.2.1-34.2.4 DOI Author Url Publisher Url Public Url

Ji Z, Zhang JF, Zhang WEI, Zhang X. 2014. A single device based Voltage Step Stress (VSS) Technique for fast reliability screening Reliability Physics Symposium, 2014 IEEE International, Reliability Physics Symposium, 2014 :GD.2.1-GD.2.4 DOI Author Url Publisher Url Public Url

Hatta SWM, Ji Z, Zhang JF, Zhang WD, Soin N, Kaczer B, Gendt SD, Groeseneken G. 2014. Energy distribution of positive charges in high-k dielectric Microelectronics Reliability, 54 :2329-2333 DOI

Tang BJ, Zhang WD, Breuil L, Robinson C, Wang YQ, Toledano-Luque M, Van Den Bosch G, Zhang JF, Van Houdt J. 2014. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations Microelectronics Reliability, 54 :2258-2261 DOI

Wang Y, Yang L, Ai Y, Li H, Zhang W. 2012. Joint signal space alignment and precoding in two-way relay multi-user networks Proceedings of the 2012 4th International Conference on Intelligent Networking and Collaborative Systems, INCoS 2012, :385-389 DOI Publisher Url

Tang BJ, Zhang WD, Zhang JF, Van den Bosch G, Govoreanu B, Van Houdt J. 2011. Abnormal V_TH/V_FB shift caused by as-grown mobile charges in Al₂O₃ and its impacts on Flash memory cell operations 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), DOI Author Url Publisher Url

Lin L, Ji Z, Zhang JF, Zhang WD. 2011. Development of a Fast Technique for Characterizing Interface States SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 35 :81-93 DOI Author Url Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for flash memory application Technical Digest - International Electron Devices Meeting, IEDM, DOI Publisher Url

Zheng XF, Zhang WD, Govoreanu B, Zhang JF, Van Houdt J. 2009. Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells MICROELECTRONIC ENGINEERING, 16th Biennial Conference on Insulating Films on Semiconductors 86 :1834-1837 DOI Author Url Publisher Url

Zheng XFN, Zhang WD, Govoreanu B, Zhang JF, van Houdt J. 2009. A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, IEEE International Electron Devices Meeting (IEDM 2009) :127-+ Author Url

Zhang JF, Chang MH, Ji Z, Zhang WD. 2008. Recent progress in understanding the instability and defects in gate dielectrics Yu M, An X. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 9th International Conference on Solid-State and Integrated-Circuit Technology :608-611 DOI Author Url Publisher Url

Chang MH, Wang Y, Zhang JF, Zhao CZ, Zhang WD, Xu M. 2007. Contribution of as-grown hole traps to NBTI ECS Transactions, 6 :245-262 DOI Publisher Url

Zhang JF, Zhao CZ, Chang MH, Zhang W, Groeseneken G, Pantisano L, De Gendt S, Heyns M. 2007. Instability and defects in gate dielectric: Similarity and differences between Hf-stacks and SiO2 ECS Transactions, 11 :219-233 DOI Publisher Url

Zheng XF, Zhang WD, Zhang JF, Chang MH, Hao Y. 2007. Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides ECS Transactions, 6 :329-341 DOI Publisher Url

Zhang WD, Hao Y. 1996. Research of a Chinese terminal I/O port ASIC Zhang QL, Tang TA, Yu HH. 1996 2ND INTERNATIONAL CONFERENCE ON ASIC, PROCEEDINGS, 2nd International Conference on ASIC :191-193 DOI Author Url Publisher Url

Ma J, Zhang WD, Zhang JF, Ji Z, Benbakhti B, Franco J, Mitard J, Witters L, Collaert N, Groeseneken G. AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction 2015 Symposium on VLSI Technology Digest of Technical Papers, 2015 SYMPOSIUM ON VLSI TECHNOLOGY :T34-T35 DOI Author Url Publisher Url Public Url

Hu Z, Chai Z, Zhang W, Zhang JF. Switch-off mechanisms in GeAsTe Ovonic Threshold Switching Selector Device 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Proceedings, 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Publisher Url Public Url